NTJD4105CT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTJD4105CT1G
Datasheet:
Description:
MOSFETs SC-88 SMD/SMT N-Channel, P-Channel number of channels:2 550 mW -8 V Continuous Drain Current (ID):630 mA 1.3 nC, 2.2 nC
| Parameter | Value |
|---|---|
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 220 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 630 mA |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 270 mW |
| Power Dissipation | 550 mW |
| Threshold Voltage | 920 mV |
| Number of Channels | 2 |
| Input capacitance | 46 pF |
| Continuous Drain Current (ID) | 630 mA |
| Rds On Max | 375 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 83 ns |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Dual |
| Rise Time | 23 ns |
| Gate Charge | 1.3 nC, 2.2 nC |
| Drain to Source Resistance | 220 mΩ |
| Nominal Vgs | 920 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -8 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 600 mV, 450 mV |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 11908
Distributors
pcbx
pcbxUnit Price$0.25050
Ext.Price$0.25050
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.25050 | $0.25050 |
| 10 | $0.15389 | $1.53890 |
| 50 | $0.12193 | $6.09650 |
| 100 | $0.09660 | $9.66000 |
| 500 | $0.07259 | $36.29500 |
| 1000 | $0.06318 | $63.18000 |
| 3000 | $0.05258 | $157.74000 |
| 5000 | $0.03941 | $197.05000 |